As the leading designer and supplier of MOSFET discrete devices, NCE Power is committed to promote complete line of MOSFET products with excellent performance and stale quality.
Our products meets customers’ different needs, with -200V~200V Vds and 100mA~400A Id and top package technology .We focus on continuously improving system efficiency and power density, as well as enhancing avalanche energy in harsh environment, to realize rapid, stable and efficient power management.
Basing on the advanced Trench DMOS process and current path layout structure, our MOSFET products realize power density maximization resulting in loss decline in the current conduction. Meanwhile, current goes more stable and uniform through the cell. Besides, we design series of products (with C at the end of the product name) with low switching loss for high frequency switching applications. Those products effectively reduce Qg, Qgd in particular, to decrease power loss in rapid switching conditions. NCE Power is the leader in the field with perfect FOM (Qg*Rdson) thanks to these advanced technology.
For half-bridge/full-bridge, AC/DC power synchronous rectifier and other reverse current applications, our MOSFET products emphases on increasing reverse current recovery speed and decreasing Irm and Vrm by optimizing Body Diode.
NCE Power launches the world's first TO-220H package (with H at the end of product name) with excellent power, current and reliability performance, which efficiently saves PCB assembly cost and working hours.
·Low FOM(Rdson*Qg) ·High avalanche energy, 100% pass EAS testing ·Low Qrr, low Irm
·High ESD ability ·Repeatability and consistency of electrical parameter ·ROHS compliant
·Various lithium battery protection module ·Portable digital power management (mobile phone and PC,etc)
·Consumer electronics power supply (LED TV,etc) ·Electric vehicle controller
·Uninterruptible power supply, inverter and various electric power suppliers ·LED illumination